[23a-11E-1~9] 3.10 Photonic structures and phenomena (formerly 3.11)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-11E-3] Fabrication and optical property evaluation of InGaN/GaN-based topological PhC cavity structure in the visible region

〇Umito Kurabe¹, Yamato Takano¹, Mirai Akimoto¹, Takuto Honda¹, Hinaki Sugiura¹, Xiao Hu⁴, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute., 4.MANA, National Institute for Materials Science)

Keywords:

GaN,topological

Topological PhC, in which the concept of topology is applied to phononic crystals, has been attracting much attention in the near-infrared region, where PhC technology is mature, but there are few reports in the visible region due to the difficulty of fabrication. We have reported topological edge propagation in the visible region using GaN-based topological PhCs fabricated by the HEATE method, a low-damage processing technique for GaN. In this report, we fabricated a topological PhC resonator structure with an active layer and observed a luminescence phenomenon that seems to be a circumferential mode.