[23a-12J-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[23a-12J-4] Formation of electron-hole coexisting system at silicon MOS interfaces

〇Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

Si MOS interfaces,Electron hole system,Recombination current