The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-12J-1~12]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sat. Mar 23, 2024 9:00 AM - 12:15 PM JST
Sat. Mar 23, 2024 12:00 AM - 3:15 AM UTC
12J (Building No. 1)
Yukinori Ono(Shizuoka Univ.), Akira Fujiwara(NTT)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[23a-12J-1]A Trial of Direct MOSFET Series Resistance Variability Measurement

〇KIYOSHI TAKEUCHI1, TOMOKO MIZUTANI1, TAKUYA SARAYA1, MASAHARU KOBAYASHI1, TOSHIRO HIRAMOTO1 (1.Univ. Tokyo)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-12J-2]Theoretical Consideration of Subthreshold Characteristics of MOSFETs in mK Range

〇Hidehiro Asai1, Hiroshi Oka1, Takumi Inaba1, Shunsuke Shitakata1, Hitoshi Yui1, Hiroshi Fuketa1, Shota Iizuka1, Kimihiko Kato1, Takashi Nakayama1, Takahiro Mori1 (1.AIST)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[23a-12J-3]Trial for Prediction of Cryo-CMOS Characteristics Utilizing Transfer-Learning

〇Takumi Inaba1, Yusuke Chiashi1, Minoru Ogura1, Hidehiro Asai1, Hiroshi Fuketa1, Hiroshi Oka1, Shota Iizuka1, Kimihiko Kato1, Shunsuke Shitakata1, Takahiro Mori1 (1.AIST)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[23a-12J-4]Formation of electron-hole coexisting system at silicon MOS interfaces

〇Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-12J-5]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (10) -Recombination process (Ⅲ)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-12J-6]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (11) -Recombination process (Ⅳ)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-12J-7]Requirement of high-temperature quantum dot operation in isoelectronic-trap-assisted tunnel FETs

〇Shota Iizuka1, Hidehiro Asai1, Kimihiko Kato1, Hiroshi Oka1, Junichi Hattori1, Koichi Fukuda1, Takahiro Mori1 (1.AIST)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-12J-8]Individual Control of Quantum Dots for High Integrated 3D stacked silicon qubits

〇Daiki Futagi1, Junoh Kim1, Tomoko Mizutani1, Takuya Saraya1, Masaharu Kobayashi1,2, Toshiro Hiramoto1 (1.IIS, UTokyo., 2.d.lab, UTokyo)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-12J-9]Preliminary investigation toward characterizing variation in silicon qubits

〇Kimihiko Kato1, Hidehiro Asai1, Hiroshi Oka1, Shota Iizuka1, Hiroshi Fuketa1, Takumi Inaba1, Takahiro Mori1 (1.AIST)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[23a-12J-10]High-accuracy charge transfer using dynamic gate compensation in a Si quantum dot

〇Gento Yamahata1, Akira Fujiwara1 (1.NTT BRL)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[23a-12J-11]RF reflectometry of quantum dots with inductor-shunted matching circuits

〇Raisei Mizokuchi1, Ryo Matsuda1, Shimpei Nishiyama1, Jun Kamioka2, Jun Yoneda1, Tetsuo Kodera1 (1.Tokyo Tech, 2.Mitsubishi Electric Corp.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)English Presentation

[23a-12J-12]Improved quality and interface of Al2O3 towards quiet Ge-based spin qubit environment

〇(D)Chutian Wen1, Ryutaro Matsuoka1, Raisei Mizokuchi1, Jun Yoneda1, Tetsuo Kodera1 (1.Tokyo Tech)
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