[23a-12L-1~10] 13.9 Compound solar cells

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[23a-12L-2] Effect of post annealing on InGaAsP Front and Rear Junction Solar Cells

〇(DC)Depu Ma¹, Hassanet Sodabanlu², Meita Asami^1,2, Kentaroh Watanabe², Masakazu Sugiyama^2,1, Yoshiaki Nakano¹ (1.University of Tokyo, 2.RCAST)

Keywords:

III-V compound semiconductors,Solar cell,Annealing

InGaAsP quaternary alloy, lattice-matched to InP substrates, has been identified as a promising candidate for multi-junction solar cells due to its wide range of bandgap energies (0.74 eV~1.35 eV)^[1]. However, due to the poor uniformity of quaternary compounds and the substantial non-radiative recombination defects, there remains considerable space for enhancement in the performance of InGaAsP solar cells^[2]. To address this issue, rapid thermal annealing (RTA) has been proposed for InGaAsP solar cells grown by molecular beam epitaxy (MBE)^[3]. In comparison to RTA, in-situ annealing can be directly performed in metal-organic chemical vapor deposition (MOCVD) equipment. However, there have been few reports on the direct in-situ annealing of InGaAsP solar cells. In this work, we studied the effect of in-situ annealing on the performance of the InGaAsP solar cells.