講演情報
[23a-12L-2]Effect of post annealing on InGaAsP Front and Rear Junction Solar Cells
〇(DC)Depu Ma1, Hassanet Sodabanlu2, Meita Asami1,2, Kentaroh Watanabe2, Masakazu Sugiyama2,1, Yoshiaki Nakano1 (1.University of Tokyo, 2.RCAST)
キーワード：
III-V compound semiconductors、Solar cell、Annealing
InGaAsP quaternary alloy, lattice-matched to InP substrates, has been identified as a promising candidate for multi-junction solar cells due to its wide range of bandgap energies (0.74 eV~1.35 eV)[1]. However, due to the poor uniformity of quaternary compounds and the substantial non-radiative recombination defects, there remains considerable space for enhancement in the performance of InGaAsP solar cells[2]. To address this issue, rapid thermal annealing (RTA) has been proposed for InGaAsP solar cells grown by molecular beam epitaxy (MBE)[3]. In comparison to RTA, in-situ annealing can be directly performed in metal-organic chemical vapor deposition (MOCVD) equipment. However, there have been few reports on the direct in-situ annealing of InGaAsP solar cells. In this work, we studied the effect of in-situ annealing on the performance of the InGaAsP solar cells.