[23a-12M-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[23a-12M-2] Deposition of In-Se films by vacuum evaporation method and evaluation of fundamental physical properties

〇Takahiro Shimbo¹, Taiyo Hirai¹, Tamihiro Gotoh¹ (1.Gunma Univ.)

Keywords:

activation energy

In recent years, phase change memory has attracted attention. Ge-Si-As-Te and Ge-As-Se systems have been used as materials. If these can be replaced by binary chalcogenide materials, it will be possible to control the composition more easily, leading to lower manufacturing costs and higher reliability. Against this background, we focused on In-Se compounds. In-Se thin films were fabricated by vacuum evaporation, and changes in optical bandgap, electrical resistivity, and activation energy due to heat treatment were investigated.