[23a-13M-1~11] 3.6 Laser processing (formerly 3.7)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-13M-7] First-principles calculations for electron temperature dependence of laser-processing efficiency on Si surface

〇Shunsuke Yamada¹, Tomohito Otobe¹ (1.KPSI, QST)

Keywords:

Si surface,TDDFT,finite temperature

The electron temperature dependence of the energy deposition on the initial process of laser processing of Si surface by near-infrared femtosecond pulsed light has been analyzed using a first-principles calculation method based on the time-dependent density functional theory (TDDFT). We found that nonlinear enhancement of the absorbed energy occurs in the region of about 3 nm from the Si surface at finite temperatures, and the energy density is more than twice that in the bulk region when the electron temperature is 1 eV.