[23a-22A-1~7] 15.5 Group IV crystals and alloys

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-22A-7] Formation of n-type GeSn (Sn: ~25%) epitaxial layer using in-situ Sb doping

〇Shigehisa Shibayama¹, Komei Takagi¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ.)

Keywords:

GeSn,InP,Mid infrared