The 71st JSAP Spring Meeting 2024
Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[23a-22A-1~7]15.5 Group IV crystals and alloys

Sat. Mar 23, 2024 9:45 AM - 11:30 AM JST
Sat. Mar 23, 2024 12:45 AM - 2:30 AM UTC
22A (Building No. 2)
Kaoru Toko(Univ. of Tsukuba)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[23a-22A-1]Synthesis of Large-Area GeS Thin Films Using Vapor Transport Method

〇Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1 (1.NIMS)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[23a-22A-2]Change in interlayer distance of GeH layers on Ge(111) by heating in vacuum

〇Kazuho matsumoto1, Masaaki Araidai2, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS. Nagoya Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[23a-22A-3]Low-temperature thermoelectric properties of Sb-doped Ge1−x−ySixSny layers on GaAs substrates

〇Itsuki Sugimura1, Masaya Nakata1, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Takayoshi Katase3, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.MDX ES, Tokyo Tech.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[23a-22A-4]Formation of CaSi2 layers on high-resistivity Si(111) substrates and their low-temperature thermoelectric properties

〇Kagiri Kato1, Shigehisa Shibayama1, Mitsuo Sakashita1, Osamu Nakatsuka1,2, Takayoshi Katase3, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.MDX ES, Tokyo Tech.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[23a-22A-5]Effect of Si cap layer on the lattice strain in a Ge wire structure on Si

Joshua Chombo1, 〇FAIZ FAIZ MOHD1, Takeshi Hizawa1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Mingjun Jiang2, Donghwan Ahn2, Kazumi Wada3, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.Kookmin Univ., 3.MIT)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23a-22A-6]Suppression of crack generation in strained SiGe on Ge-on-Si(111) by selective ion implantation

〇Masaki Nagao1, Ayaka Odashima1, Takahiro Inoue1, Michihiro Yamada2,3, Kohei Hamaya2,4, Kentaro Sawano1 (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.OTRI, Osaka Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[23a-22A-7]Formation of n-type GeSn (Sn: ~25%) epitaxial layer using in-situ Sb doping

〇Shigehisa Shibayama1, Komei Takagi1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ.)
Back to Category List