[23a-31A-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[23a-31A-8] Epitaxial structure of NiO on (-102) β-Ga₂O₃

〇Takayoshi Oshima¹, Shinji Nakagomi² (1.NIMS, 2.Ishinomaki Senshu Univ.)

Keywords:

Ga2O3,NiO