[23a-31B-1~8] 17.3 Layered materials

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[23a-31B-1] Doping and Contact Resistance Measurements of MoS₂ Monolayer

〇(P)Puneet Jain¹, Shotaro Yotsuya¹, Riku Mochizuki¹, Kiego Matsuyama¹, Kosuke Nagashio¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

Keywords:

Molybdenum disulfide (MoS2),Contact resistance,Transfer length method (TLM)

Contact resistance is a major issue in scaling-down the transistor technology using 2D materials, as most of the applied drain voltage is dropped across the metal-semiconductor contact. In our present work, we have fabricated molybdenum disulfide (MoS₂) (a, 2D semiconductor material) thin-film transistor (TFT) and tried to reduce the contact resistance of MoS₂-metal contact using an asymmetric-molecule doping of MoS₂. Contact resistance was studied using transfer length method (TLM) by fabricating MoS₂ TFT. Doping is done only in the channel region of the fabricated TFT. Bismuth (Bi) is used as metal electrode, which is a semi-metal.