講演情報
[23a-31B-1]Doping and Contact Resistance Measurements of MoS2 Monolayer
〇(P)Puneet Jain1, Shotaro Yotsuya1, Riku Mochizuki1, Kiego Matsuyama1, Kosuke Nagashio1, Daisuke Kiriya1 (1.The Univ. of Tokyo)
キーワード：
Molybdenum disulfide (MoS2)、Contact resistance、Transfer length method (TLM)
Contact resistance is a major issue in scaling-down the transistor technology using 2D materials, as most of the applied drain voltage is dropped across the metal-semiconductor contact. In our present work, we have fabricated molybdenum disulfide (MoS2) (a, 2D semiconductor material) thin-film transistor (TFT) and tried to reduce the contact resistance of MoS2-metal contact using an asymmetric-molecule doping of MoS2. Contact resistance was studied using transfer length method (TLM) by fabricating MoS2 TFT. Doping is done only in the channel region of the fabricated TFT. Bismuth (Bi) is used as metal electrode, which is a semi-metal.