Presentation Information
[23a-P03-13]Enhanced Terahertz-Wave Radiation from Si by Near-UV Irradiation
〇Takeshi Moriyasu1, Keiya Matsui1, Kodai Kato1, Masahiko Tani2, Hideaki Kitahara2, Mitsutaka Kumakura1 (1.Univ. of Fukui, 2.FIR-FU)
Keywords:
Terahertz wave radiation,semiconductor
The terahertz wave radiation efficiency of Si has been observed to be over two orders of magnitude lower than that of Indium Phosphide InP and Gallium Arsenide GaAs in experiments utilizing an ultrashort pulsed laser with a wavelength of 625 nm. It can be considered that the significant difference in efficiency has been attributed to the fact that Si is an indirect bandgap semiconductor. In this study, we centered our focus on the fact that the direct transition level of Si lies in the ultraviolet region. We conducted an investigation into the terahertz wave emission from Si using ultrashort pulsed light in the near-ultraviolet region, with the aim of enhancing radiation efficiency.