Presentation Information
[23a-P03-4]Fabrication and characterization of low barrier height InAs/GaxIn1-xAs/InAs heterostructure diodes toward millimeter-wave detection
〇(M1)Moto Inoue1, Ryo Kawano1, Masatoshi Koyama,1, Akihiko Fujii1, Toshihiko Maemoto1, Shigehiko Sasa1 (1.Osaka Inst tech)
Keywords:
millimeter-wave detector,Terahertz-wave detector,low barrier height heterostructure diode
The Fermi-level managed barrier diodes and low-barrier heterostructure diodes are attractive detection devices for millimeter-wave and terahertz-wave with broadband and low-noise operation. In this study, we propose a new low-barrier heterostructure diode based on a GaxIn1-xAs triangular barrier with n-InAs reservoir layers and discuss on their nonlinear current-voltage characteristics.