[23p-12F-1~14] 6.6 Probe Microscopy

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-12F-5] Fluctuation analysis of microscopic MOS capacitance-voltage profiles observed by time-resolved scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Yasuo Cho² (1.RIEC., Tohoku Univ., 2.NICHe., Tohoku Univ.)

Keywords:

scanning nonlinear dielectric microscopy,SiC,MOS interface

We present a microscopic technique for characterizing charge states at the insulator-semiconductor interface using time-resolved scanning nonlinear dielectric microscopy (SNDM). Time-resolved SNDM allows real-space imaging of the interface charge density originating from interface defects and fixed charges. We apply the proposed technique to SiO₂/SiC and show that the observed spatial fluctuations of the interface charge density can strongly affect the channel mobility of SiC-based MOSFETs by using device simulation incorporating real-space SNDM images.