[23p-12G-1~14] CS.7 Code-sharing Session of 6.5 & 7.5

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-12G-2] Growth and characterization of Bi₂Se₃ ultrathin films by MBE with a single evaporation source

〇Shinichiro Hatta¹, Kenjiro Fukasawa¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1.Kyoto Univ.)

Keywords:

topological insulator,ultrathin film,MBE

We have investigated the thin film growth of Bi₂Se₃ by molecular beam epitaxy. Although two separate evaporation sources of Bi and Se are generally used, we evaporated polycrystalline granular Bi₂Se₃ from a crucible made of Ta. The deposition was done on the Bi-terminated Si(111) substrate at room temperature followed by postannealing at ~470 K. The evolution of band structure measured by angle-resolved photoelectron spectroscopy revealed the layer-by-layer growth of the (111)-oriented Bi₂Se₃ films.