[23p-12G-1~14] CS.7 Code-sharing Session of 6.5 & 7.5

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-12G-5] XAFS, and HAXPES study for the atomic structure and the chemical state of Sn dopant in β-Ga₂O₃(001)

〇(D)YUHUA TSAI^1,2, Yoshiyuki Yamashita^1,2 (1.NIMS, 2.Kyushu Univ.)

Keywords:

beta Ga2O3,XANES,EXAFS

Gallium oxide (Ga₂O₃) is the wide bandgap semiconductor and will be used in the electronic and photonic devices. In such applications, proper doping is required to prepare Ga₂O₃-based devices. An Sn atom is consider to be one of dopant candidates for β-Ga₂O₃. However, the atomic structure of the active Sn dopant site has not been clarified yet. In this study, we used X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure, and photoelectron spectroscopy (PES) to investigate the atomic structure and chemical state of the Sn dopant in β-Ga₂O₃. We found that the Sn atom occupies the octahedral Ga substitution site and acts as an active dopant in β-Ga₂O₃.