講演情報
[23p-12G-5]XAFS, and HAXPES study for the atomic structure and the chemical state of Sn dopant in β-Ga2O3(001)
〇(D)YUHUA TSAI1,2, Yoshiyuki Yamashita1,2 (1.NIMS, 2.Kyushu Univ.)
キーワード：
beta Ga2O3、XANES、EXAFS
Gallium oxide (Ga2O3) is the wide bandgap semiconductor and will be used in the electronic and photonic devices. In such applications, proper doping is required to prepare Ga2O3-based devices. An Sn atom is consider to be one of dopant candidates for β-Ga2O3. However, the atomic structure of the active Sn dopant site has not been clarified yet. In this study, we used X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure, and photoelectron spectroscopy (PES) to investigate the atomic structure and chemical state of the Sn dopant in β-Ga2O3. We found that the Sn atom occupies the octahedral Ga substitution site and acts as an active dopant in β-Ga2O3.