[23p-12L-1~10] 13.9 Compound solar cells

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-12L-4] Characterization of backside interface in Cu(In,Ga)Se₂ solar cells on light substrate

〇Motoya Oba¹, Yukiko Kamikawa², Takehiko Nagai², Shogo Ishizuka², Jiro Nishinaga², Hitoshi Tampo², Tetsuji Okuda¹, Norio Terada^1,2 (1.Kagoshima Univ., 2.AIST)

Keywords:

CIS solar cell

The electronic structure of the CIGSe backside / Mo electrode interface in a CIGSe cell on a light substrate polyimide was characterized by in-situ UPS and IPES. From the results, it was found that the work function of the opposite CIGSe backside and Mo electrode surface layers are almost identical, and that the electronic structure of the Mo-Se layer is different from that of bulk MoSe₂, and also depends on the cell type. The composition and electronic structure of the backside interface of several cell types suggest that the Mo deficiency ratio in the Mo-Se layer on the Mo electrode surface is the origin of the different electronic structures.