[23p-12L-1~10] 13.9 Compound solar cells

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-12L-7] Deposition of In₂S₃ Thin Films via Mist-CVD Method

〇Yohei Araki¹, Akihiro Funaki¹, Fumiya Furumaki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech.)

Keywords:

mist-CVD,n-type buffer layer

In₂S₃ thin film was deposited by mist-CVD method as an alternative material for n-type CdS buffer layer, which is important for improving the efficiency of Cu(In,Ga)Se₂ solar cells. The deposition was conducted in a glove box filled with nitrogen to avoid oxygen contamination. From XRD measurements and SEM observations, it was confirmed that In₂S₃ was deposited uniformly on the non-alkaline glass substrate using the mist-CVD method.