Presentation Information

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[23p-12P-5]Charge relaxation time distribution of 1/f noise

〇Zenji Yatabe¹, Seiya Kasai² (1.Kumamoto Univ., 2.Hokkaido Univ.)

Keywords:

noise,RTN,1/f

S(f) ∼1/f^α spectral densities, where f is the frequency and α is the slope of the power spectrum S(f), are widely observed in current noise of transistor. The origin of the current noise is attributed to the random charging and discharging of the surface/interface or oxide with electron traps, whose power spectrum density occasionally shows complicated curves (bumps and/or shoulders). In this study, an analytical technique is proposed to reveal the relaxation time distribution G(τ) using the current noise spectrum S(f) of a transistor.

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