[23p-12P-1~7] 9.3 Nanoelectronics

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-12P-6] Improvement of sensitivity to an embedded nanostructure in a Si MOSFET

〇(M1)Renxiang Lyu¹, Mitsuya Takuma¹, Kasai Seiya¹ (1.RCIQE,Hokkaido Univ.)

Keywords:

semiconductor device,random nanostructure,Artifact metrics