Presentation Information
[23p-1BB-3]Memristive oscillation observed in [Ni(chxn)2Br]Br2
〇Yugo Oshima1, Taishi Takenobu2, Keisuke Ishiguro2, Shinya Takaishi3 (1.RIKEN, 2.Nagoya Univ., 3.Tohoku Univ.)
Keywords:
Memristor,Nonlinear Transport,Oscillation
Memristors, which are passive devices proposed by L. O. Chua, are expected to be used in the next-generation memories or quantum computers since it does not require power to hold its information and can be used as an analog type memory since its resistance depends continuously on the electric charge. We have previously reported that a Bilayer-type molecular material (Et-4BrT)[Ni(dmit)2]2 exhibits a "Pinched Hysteresis Loop" characteristic of memristors, and that memristive oscillation occurs by connecting capacitors in parallel and applying a bias current to the material. Here, we present that a "Pinched Hysteresis Loop" also exists in the halogen-bridged metal complex [Ni(chxn)2Br]Br2 and that memristive oscillation also occurs in this complex.