[23p-1BJ-1~12] 10.3 Spin devices, magnetic memories and storages

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-1BJ-9] Canted Magnetic Field Assisted Spin Orbit Torque Switching in a Perpendicularly Magnetized Nano-magnet

〇Tian Li¹, Masahiro Koike¹, Toshiya Murakami¹, Nobuyuki Umetsu¹, Hiroki Tokuhira¹, Michael Quinsat¹, Masatoshi Yoshikawa¹ (1.Institute of Memory Technology R&D, Kioxia Corp.)

Keywords:

spin orbit torque,SOT,SOT-MRAM

Spin orbit torque(SOT) driven magnetization switching has recently attracted attention towards next generation magnetic memory. Although SOT switching with perpendicular magnetization anisotropy (PMA) is attractive for high-speed and long-retention applications, bias field is necessary for a deterministic switching. In this study, we investigate bias field effect on the SOT switching with PMA by means of micromagnetic simulation, and newly propose a stable and fast magnetization switching assisted by canted magnetic fields.