講演情報
[23p-1BJ-9]Canted Magnetic Field Assisted Spin Orbit Torque Switching in a Perpendicularly Magnetized Nano-magnet
〇Tian Li1, Masahiro Koike1, Toshiya Murakami1, Nobuyuki Umetsu1, Hiroki Tokuhira1, Michael Quinsat1, Masatoshi Yoshikawa1 (1.Institute of Memory Technology R&D, Kioxia Corp.)
キーワード：
spin orbit torque、SOT、SOT-MRAM
Spin orbit torque(SOT) driven magnetization switching has recently attracted attention towards next generation magnetic memory. Although SOT switching with perpendicular magnetization anisotropy (PMA) is attractive for high-speed and long-retention applications, bias field is necessary for a deterministic switching. In this study, we investigate bias field effect on the SOT switching with PMA by means of micromagnetic simulation, and newly propose a stable and fast magnetization switching assisted by canted magnetic fields.