[23p-1BL-1~10] Symposium Commemorating the 80th Anniversary of the Establishment of Solid-State Physics and Applications Division

2:50 PM - 3:20 PM JST(5:50 AM - 6:20 AM UTC)

[23p-1BL-4] Mystical Relation between Electron Devices and Materials - Celebrating the 80th Anniversary of the Solid State Physics and Applications Division -

〇Eisuke Tokumitsu¹ (1.JAIST)

Keywords:

semiconductor,doping,ferroelectric

Some of our past research activities related to electron devices and materials are presented as well as my involvement with the Solid State Physics and Applications Division. First, overall view of maximum carrier concentration in semiconductors is presented, along with an episode when I found. Next, a conductive oxide channel thin film transistor realized by large charge density control capability of a ferroelectric gate is described. Finally, activities of the division I involved are also introduced.