[23p-22A-1~8] 15.5 Group IV crystals and alloys

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-22A-4] Effects of Post-Annealing on Interface-Modulated Sn-Doped poly-Ge Films / Insulator

〇Ryu Hashimoto¹, Taishiro Koga¹, Takashi Kajiwara¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

Keywords:

semiconductor,germanium