Presentation Information
[23p-31B-16]Magnetic spontaneous photovoltaic effect in MoS2/CrPS4 artificial heterostructure device
〇Shuichi Asada1, Keisuke Shinokita1, Kazunari Matsuda1 (1.IAE, Kyoto Univ.)
Keywords:
shift current,bulk photovoltaic effect,magnetic injection current
In this research, we fabricated MoS2/CrPS4 artificial heterostructure devices which are expected for shift current from broken P-symmetry at the interface, and measure the photovoltaic properties. We found spontaneous photocurrent without any bias voltage.
Moreover, the spontaneous photocurrent suddenly change below magnetic transition temperature of CrPS4, against to well known shift current properties in non magnetic materials.
We will discuss about the origin of this spontnaeous photocurrent change.
Moreover, the spontaneous photocurrent suddenly change below magnetic transition temperature of CrPS4, against to well known shift current properties in non magnetic materials.
We will discuss about the origin of this spontnaeous photocurrent change.