[23p-31B-1~18] 17.3 Layered materials | The 71st JSAP Spring Meeting 2024

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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[23p-31B-1~18]17.3 Layered materials

Sat. Mar 23, 2024 1:00 PM - 6:00 PM JST
Sat. Mar 23, 2024 4:00 AM - 9:00 AM UTC

31B (Building No. 3)

Shu Nakaharai(Tokyo Univ. of Technology), Mahito Yamamoto(Kansai University)

1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[23p-31B-1][The 45th Best Review Paper Award Speech] Assembly of van der Waals junctions of two-dimensional materials

〇Momoko Onodera¹, Satoru Masubuchi¹, Rai Moriya¹, Tomoki Machida¹ (1.IIS, Univ. of Tokyo)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[23p-31B-2]Selective detection of Γ-Γ tunneling and K-Γ tunneling in WSe₂/h-BN/WSe₂ heterostructures

〇Kei Kinoshita¹, Rai Moriya¹, Seiya Kawasaki¹, Momoko Onodera¹, Yijin Zhang¹, Kenji Watanabe², Takashi Taniguchi², Takao Sasagawa³, Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Tokyo Tech.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-3]Observation of negative differential resistance and clarification for formation mechanism of band structure using resonant tunneling devices based on transition metal dichalcogenides

〇Seiya Kawasaki¹, Kei Kinoshita¹, Momoko Onodera¹, Rai Moriya¹, Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe², Takashi Taniguchi², Takao Sasagawa³, Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Tokyo Tech.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-4]Direct observation of electronic band structure in Janus monolayer transition metal dichalcogenides

〇(M2)Shunsuke Akatsuka¹, Masato Sakano¹, Hiroshi Nakajo^2,3, Toshiaki Kato², Naoya Yamaguchi⁴, Fumiyuki Ishii⁴, Takato Yamamoto¹, Natsuki Mitsuishi⁵, Kenji Watanabe⁶, Takashi Taniguchi⁶, Miho Kitamura⁷, Koji Horiba⁷, Katsuaki Sugawara^8,9, Seigo Souma⁹, Takafumi Sato^8,9, Hiroshi Kumigashira¹⁰, Yuta Seo¹¹, Satoru Masubuchi¹¹, Tomoki Machida¹¹, Kyoko Ishizaka^1,5 (1.QPEC and Dept. of Appl. Phys., The Univ. of Tokyo, 2.Graduate School of Engineering, Tohoku Univ., 3.KOKUSAI ELECTRIC CORP., 4.NanoMaRi Kanazawa Univ., 5.CEMS, RIKEN, 6.NIMS, 7.QST, 8.Dept. Physics, Tohoku Univ., 9.WPI-AIMR, Tohoku Univ., 10.IMRAM, Tohoku Univ., 11.IIS, The Univ. of Tokyo)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-5]Nanoscale Observation of a MoS₂ stack forming pn junction using
scanning nonlinear dielectric microscopy

〇(M2)Taiyo Ishizuka^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-6]Phase transformation to topological phase in MoS₂ by covering an organic polymer

〇Keigo Matsuyama¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-7]Evaluation of luminescence property of layered tin sulfide under applied strain

〇Atsuhiko Mori¹, Kazuki Koyama¹, Jun Ishihara¹, Sota Yamamoto¹, Makoto Kohda^1,2,3,4 (1.Tohoku Univ., 2.CSIS, TOhoku Univ., 3.DEFS, Tohoku Univ., 4.QUARC, QST)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-8]Creation of large-area two-dimensional material heterostructures by integrating
a high-quality transfer method and crystal orientation control technology

〇Aoi Hamada^1,2, Chao Tang^1,3, Koichi Tamura^1,4, Akira Sato¹, Taiichi Otsuji¹ (1.RIEC, Tohoku Univ., 2.School of Engineering,Tohoku Univ., 3.FRIS, Tohoku Univ., 4.Graduate School of Engineering, Tohoku Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-9]Transfer of CVD-grown MoS₂ with a functional tape

〇Mai Kuroki¹, Satoru Fukamachi², Maki Nakatani², Zongpeng Ma¹, Satoshi Honda³, Atsushi Yasui³, Hiroki Ago^1,2 (1.Kyushu Univ., 2.Kyushu Univ. GIC, 3.Nitto Denko)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[23p-31B-10][The 55th Young Scientist Presentation Award Speech] Shift current in single domain SnS crystal and control of local polarization by strain

〇Ryo Nanae¹, Satsuki Kitamura¹, Redhwan Moqbel², Yih Ren Chang³, Kaito Kanahashi¹, Tomonori Nishimura¹, Kung-Hsuan Lin², Kosuke Nagashio¹ (1.UTokyo, 2.Academia Cinica, 3.RIKEN)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-11]Transition from p⁺ to n-type with layer number reduction in dilute Nb-doped WSe₂

〇Kaito Kanahashi¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.U. Tokyo, 2.Saitama Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe₂-FET via Deposition of F6-TCNNQ

Daisuke Horiba¹, Takuya Kojima¹, Kensho Matsuda¹, Kohei Sakanashi¹, Shohei Kumagai², Toshihiro Okamoto², Nobuyuki Aoki¹ (1.Chiba Univ., 2.TITech)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[23p-31B-13]Observation of valley current quantization by split gate structure

〇Kei Takahashi¹, Yusuke Nakayama¹, Jonathan P Bird^1,2, Kenji Watanabe³, Takashi Taniguchi³, Mengnan Ke¹, Nobuyuki Aoki¹ (1.Chiba Univ, 2.Buffalo Univ, 3.NIMS)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[23p-31B-14]Thickness control of layered germanium arsenide film via oxidation process

〇Ayuta Hasumi¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-15]In-situ monitoring of electrical transport properties of transition metal dichalcogenide during Janus reactions

〇Soma Aoki^1,2, Hiroshi Nakajo^1,2,3, Toshiaki Kato^1,2 (1.Grad. Sch. of Eng. , Tohoku Univ., 2.AIMR Tohoku Univ., 3.KOKUSAI ELECTRIC Corp.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

The 71st JSAP Spring Meeting 2024

Session Details

[23p-31B-1~18]17.3 Layered materials

[23p-31B-1][The 45th Best Review Paper Award Speech] Assembly of van der Waals junctions of two-dimensional materials

[23p-31B-2]Selective detection of Γ-Γ tunneling and K-Γ tunneling in WSe₂/h-BN/WSe₂ heterostructures

[23p-31B-3]Observation of negative differential resistance and clarification for formation mechanism of band structure using resonant tunneling devices based on transition metal dichalcogenides

[23p-31B-4]Direct observation of electronic band structure in Janus monolayer transition metal dichalcogenides

[23p-31B-5]Nanoscale Observation of a MoS₂ stack forming pn junction using
scanning nonlinear dielectric microscopy

[23p-31B-6]Phase transformation to topological phase in MoS₂ by covering an organic polymer

[23p-31B-7]Evaluation of luminescence property of layered tin sulfide under applied strain

[23p-31B-8]Creation of large-area two-dimensional material heterostructures by integrating
a high-quality transfer method and crystal orientation control technology

[23p-31B-9]Transfer of CVD-grown MoS₂ with a functional tape

[23p-31B-10][The 55th Young Scientist Presentation Award Speech] Shift current in single domain SnS crystal and control of local polarization by strain

[23p-31B-11]Transition from p⁺ to n-type with layer number reduction in dilute Nb-doped WSe₂

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe₂-FET via Deposition of F6-TCNNQ

[23p-31B-13]Observation of valley current quantization by split gate structure

[23p-31B-14]Thickness control of layered germanium arsenide film via oxidation process

[23p-31B-15]In-situ monitoring of electrical transport properties of transition metal dichalcogenide during Janus reactions

[23p-31B-16]Magnetic spontaneous photovoltaic effect in MoS₂/CrPS₄ artificial heterostructure device

[23p-31B-17]Rectifying properties of single-crystal h-BN-based vertical power devices

[23p-31B-18]Development of organic photodiode with Ti₃C₂T_x MXene hole transport layer

Session Details

[23p-31B-1~18]17.3 Layered materials

[23p-31B-1][The 45th Best Review Paper Award Speech] Assembly of van der Waals junctions of two-dimensional materials

[23p-31B-2]Selective detection of Γ-Γ tunneling and K-Γ tunneling in WSe2/h-BN/WSe2 heterostructures

[23p-31B-3]Observation of negative differential resistance and clarification for formation mechanism of band structure using resonant tunneling devices based on transition metal dichalcogenides

[23p-31B-4]Direct observation of electronic band structure in Janus monolayer transition metal dichalcogenides

[23p-31B-5]Nanoscale Observation of a MoS2 stack forming pn junction usingscanning nonlinear dielectric microscopy

[23p-31B-6]Phase transformation to topological phase in MoS2 by covering an organic polymer

[23p-31B-7]Evaluation of luminescence property of layered tin sulfide under applied strain

[23p-31B-8]Creation of large-area two-dimensional material heterostructures by integratinga high-quality transfer method and crystal orientation control technology

[23p-31B-9]Transfer of CVD-grown MoS2 with a functional tape

[23p-31B-10][The 55th Young Scientist Presentation Award Speech] Shift current in single domain SnS crystal and control of local polarization by strain

[23p-31B-11]Transition from p+ to n-type with layer number reduction in dilute Nb-doped WSe2

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe2-FET via Deposition of F6-TCNNQ

[23p-31B-13]Observation of valley current quantization by split gate structure

[23p-31B-14]Thickness control of layered germanium arsenide film via oxidation process

[23p-31B-15]In-situ monitoring of electrical transport properties of transition metal dichalcogenide during Janus reactions

[23p-31B-16]Magnetic spontaneous photovoltaic effect in MoS2/CrPS4 artificial heterostructure device

[23p-31B-17]Rectifying properties of single-crystal h-BN-based vertical power devices

[23p-31B-18]Development of organic photodiode with Ti3C2Tx MXene hole transport layer

[23p-31B-2]Selective detection of Γ-Γ tunneling and K-Γ tunneling in WSe₂/h-BN/WSe₂ heterostructures

[23p-31B-5]Nanoscale Observation of a MoS₂ stack forming pn junction using
scanning nonlinear dielectric microscopy

[23p-31B-6]Phase transformation to topological phase in MoS₂ by covering an organic polymer

[23p-31B-8]Creation of large-area two-dimensional material heterostructures by integrating
a high-quality transfer method and crystal orientation control technology

[23p-31B-9]Transfer of CVD-grown MoS₂ with a functional tape

[23p-31B-11]Transition from p⁺ to n-type with layer number reduction in dilute Nb-doped WSe₂

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe₂-FET via Deposition of F6-TCNNQ

[23p-31B-16]Magnetic spontaneous photovoltaic effect in MoS₂/CrPS₄ artificial heterostructure device

[23p-31B-18]Development of organic photodiode with Ti₃C₂T_x MXene hole transport layer