[23p-31B-1~18] 17.3 Layered materials

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-31B-17] Rectifying properties of single-crystal h-BN-based vertical power devices

〇Supawan Ngamprapawat¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1.Univ. Tokyo, 2.NIMS)

Keywords:

hexagonal boron nitride

Hexagonal boron nitride (h-BN), an ultra-wide band gap semiconductor (~5.9 eV), emerges as a promising candidate for high-power electronics. Despite its potential, the development of h-BN-based power devices faces significant challenges related to contact formation. In this study, we employ our established contact formation technique and demonstrate the rectifying properties of h-BN through the NiAu/h-BN:C/graphite vertical structure.