[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-52A-11] Investigating the Mechanism of SiO₂/4H-SiC Interface Traps Passivation
by Boron Incorporation through FT-IR Analysis of Near-Interface SiO₂

〇(DC)Runze Wang¹, Munetaka Noguchi², Shiro Hino², Koji Kita³ (1.School of Eng., The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corp., 3.GSFS, The Univ. of Tokyo)

Keywords:

4H-SiC,Interface traps,power device

Intentional boron (B) incorporation at SiO₂ /SiC interface revealed a decrease in interface traps including near interface traps and D_it. To elucidate the correlation between B concentration and stoichiometry change in SiO₂ within nanometers from the interface, Fourier transform infrared spectroscopy with attenuated total reflection mode was used to examine the shift in peak frequency of the antisymmetric stretching vibration of the Si-O-Si bond by changing the film thickness with buffered HF solution. The study reveals a strong correlation between reduced oxygen deficiency and decreased interface traps attributing to the effectiveness of B incorporation mechanism.