[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization | The 71st JSAP Spring Meeting 2024

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[23p-52A-1~18]13.7 Compound and power devices, process technology and characterization

Sat. Mar 23, 2024 1:00 PM - 6:15 PM JST
Sat. Mar 23, 2024 4:00 AM - 9:15 AM UTC

52A (Building No. 5)

Takuji Hosoi(Kwansei Gakuin Univ.)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[23p-52A-1]Hydrogen introduction into 4H-SiC by plasma treatment

〇(P)Tong Li¹, Hitoshi Sakane², Shunta Harada³, Yasuyoshi Kurokawa³, Masashi Kato¹ (1.NITech., 2.SHI-ATEX, 3.Nagoya Univ.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[23p-52A-2]Effects of H⁺ implantation into SiC substrates before epitaxial growth

〇Masashi Kato¹, Ohga Watanabe¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[23p-52A-3]Carrier recombination in highly Al doped 4H-SiC

〇Masashi Kato¹, Kazuhiro Tanaka¹ (1.NITech)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-52A-4]Evaluation of omnidirectional photoluminescence for 4H-SiC freestanding epilayers

〇Hayaki Makino¹, Kengo Suzuki², Masashi Kato¹ (1.NITech, 2.Hamamatsu Photonics K.K.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-52A-5]Comparison of Al <0001> channeling/randomly injected electron stopping power ratio in 4H-SiC with <001> channeling/randomly injected electron stopping power ratio in Si

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-52A-6]Investigation of electronic properties of n-type 4H-SiC crystal with Ti/Au electrode film by Raman spectroscopy at high temperatures

〇Shu Ishida¹, Kousei Nishiwaki¹, Jun Suda¹ (1.Chukyo Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-52A-7]Measurement of Transient Heat Transfer at Organic/Semiconductor Interface based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichirou Higashi¹ (1.Hiroshima Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-52A-8][The 45th Young Scientist Award Speech] Mobility improvement in heavily-doped SiC (0001), (1120) and (1100) MOSFETs using oxidation minimizing process

〇Keita Tachiki¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-52A-9]Defect formation in 4H-SiC induced by annealing under high-temperature and low oxygen partial pressure characterized by FT-IR

〇(D)Chuyang Lyu¹, Takashi Onaya¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-52A-10]Degradation of electrical characteristics of SiC MOSFETs due to sacrificial oxidation

〇(B)Keiji Hachiken¹, Hiroki Fujimoto¹, Takuma Kobayashi¹, Hirohisa Hirai², Mitsuru Sometani^1,2, Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-52A-11]Investigating the Mechanism of SiO₂/4H-SiC Interface Traps Passivation
by Boron Incorporation through FT-IR Analysis of Near-Interface SiO₂

〇(DC)Runze Wang¹, Munetaka Noguchi², Shiro Hino², Koji Kita³ (1.School of Eng., The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corp., 3.GSFS, The Univ. of Tokyo)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-52A-12]Consideration on the cause of change of nitrogen incorporation kinetics at 4H-SiC/oxide interfaces by the concentration of rare earth elements in the oxide

〇Tatsumi Nakashima¹, Takashi Onaya¹, Koji Kita¹ (1.Graduate School of Frontier Science, Univ. of Tokyo)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-52A-17]Density control of color centers at the SiO₂/SiC interface by low-temperature reoxidation process and its correlation with electrical characteristics

〇(M1)Kentaro Onishi¹, Takato Nakanuma¹, Kosuke Tahara², Katsuhiro Kutsuki², Takayoshi Shimura¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs., Inc.)

5:45 PM - 6:15 PM JST(8:45 AM - 9:15 AM UTC)

[23p-52A-18][JSAP Kenji Natori Award Speech] Power Semiconductor Devices, History, Development, and Future Prospects

〇Tatsuhiko Fujihira¹ (1.Fuji Electric)

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The 71st JSAP Spring Meeting 2024

Session Details

[23p-52A-1~18]13.7 Compound and power devices, process technology and characterization

[23p-52A-1]Hydrogen introduction into 4H-SiC by plasma treatment

[23p-52A-2]Effects of H⁺ implantation into SiC substrates before epitaxial growth

[23p-52A-3]Carrier recombination in highly Al doped 4H-SiC

[23p-52A-4]Evaluation of omnidirectional photoluminescence for 4H-SiC freestanding epilayers

[23p-52A-5]Comparison of Al <0001> channeling/randomly injected electron stopping power ratio in 4H-SiC with <001> channeling/randomly injected electron stopping power ratio in Si

[23p-52A-6]Investigation of electronic properties of n-type 4H-SiC crystal with Ti/Au electrode film by Raman spectroscopy at high temperatures

[23p-52A-7]Measurement of Transient Heat Transfer at Organic/Semiconductor Interface based on Optical-Interference Contactless Thermometry (OICT)

[23p-52A-8][The 45th Young Scientist Award Speech] Mobility improvement in heavily-doped SiC (0001), (1120) and (1100) MOSFETs using oxidation minimizing process

[23p-52A-9]Defect formation in 4H-SiC induced by annealing under high-temperature and low oxygen partial pressure characterized by FT-IR

[23p-52A-10]Degradation of electrical characteristics of SiC MOSFETs due to sacrificial oxidation

[23p-52A-11]Investigating the Mechanism of SiO₂/4H-SiC Interface Traps Passivation
by Boron Incorporation through FT-IR Analysis of Near-Interface SiO₂

[23p-52A-12]Consideration on the cause of change of nitrogen incorporation kinetics at 4H-SiC/oxide interfaces by the concentration of rare earth elements in the oxide

[23p-52A-13]Understanding the atmosphere effect on the nitridation kinetics at the SiC/SiO₂ interface using NO

[23p-52A-14]Mechanism of Mechanical Stress-Induced Flat-band Voltage Change in 4H-SiC MOS Structure

[23p-52A-15]Reaction of NO molecule at 4H-SiC/SiO₂ interface and its orientation dependence: a first-principles study

[23p-52A-16]Systematic investigation of oxygen-related defects in 4H-SiC by ab initio calculations

[23p-52A-17]Density control of color centers at the SiO₂/SiC interface by low-temperature reoxidation process and its correlation with electrical characteristics

[23p-52A-18][JSAP Kenji Natori Award Speech] Power Semiconductor Devices, History, Development, and Future Prospects

Session Details

[23p-52A-1~18]13.7 Compound and power devices, process technology and characterization

[23p-52A-1]Hydrogen introduction into 4H-SiC by plasma treatment

[23p-52A-2]Effects of H+ implantation into SiC substrates before epitaxial growth

[23p-52A-3]Carrier recombination in highly Al doped 4H-SiC

[23p-52A-4]Evaluation of omnidirectional photoluminescence for 4H-SiC freestanding epilayers

[23p-52A-5]Comparison of Al <0001> channeling/randomly injected electron stopping power ratio in 4H-SiC with <001> channeling/randomly injected electron stopping power ratio in Si

[23p-52A-6]Investigation of electronic properties of n-type 4H-SiC crystal with Ti/Au electrode film by Raman spectroscopy at high temperatures

[23p-52A-7]Measurement of Transient Heat Transfer at Organic/Semiconductor Interface based on Optical-Interference Contactless Thermometry (OICT)

[23p-52A-8][The 45th Young Scientist Award Speech] Mobility improvement in heavily-doped SiC (0001), (1120) and (1100) MOSFETs using oxidation minimizing process

[23p-52A-9]Defect formation in 4H-SiC induced by annealing under high-temperature and low oxygen partial pressure characterized by FT-IR

[23p-52A-10]Degradation of electrical characteristics of SiC MOSFETs due to sacrificial oxidation

[23p-52A-11]Investigating the Mechanism of SiO2/4H-SiC Interface Traps Passivationby Boron Incorporation through FT-IR Analysis of Near-Interface SiO2

[23p-52A-12]Consideration on the cause of change of nitrogen incorporation kinetics at 4H-SiC/oxide interfaces by the concentration of rare earth elements in the oxide

[23p-52A-13]Understanding the atmosphere effect on the nitridation kinetics at the SiC/SiO2 interface using NO

[23p-52A-14]Mechanism of Mechanical Stress-Induced Flat-band Voltage Change in 4H-SiC MOS Structure

[23p-52A-15]Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

[23p-52A-16]Systematic investigation of oxygen-related defects in 4H-SiC by ab initio calculations

[23p-52A-17]Density control of color centers at the SiO2/SiC interface by low-temperature reoxidation process and its correlation with electrical characteristics

[23p-52A-18][JSAP Kenji Natori Award Speech] Power Semiconductor Devices, History, Development, and Future Prospects

[23p-52A-2]Effects of H⁺ implantation into SiC substrates before epitaxial growth

[23p-52A-11]Investigating the Mechanism of SiO₂/4H-SiC Interface Traps Passivation
by Boron Incorporation through FT-IR Analysis of Near-Interface SiO₂

[23p-52A-13]Understanding the atmosphere effect on the nitridation kinetics at the SiC/SiO₂ interface using NO

[23p-52A-15]Reaction of NO molecule at 4H-SiC/SiO₂ interface and its orientation dependence: a first-principles study

[23p-52A-17]Density control of color centers at the SiO₂/SiC interface by low-temperature reoxidation process and its correlation with electrical characteristics