[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[23p-52A-14] Mechanism of Mechanical Stress-Induced Flat-band Voltage Change in 4H-SiC MOS Structure

〇(DC)Qiao Chu¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1.School of Eng., The Univ. of Tokyo, 2.Hitachi)

Keywords:

Strain engineering,SiC MOSFET,Flat-band voltage

For the development of advanced circuits in high power application with SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), more accurate tuning and variability suppression of the threshold voltage (V_th) are expected. Recently, we have reported on mechanical stress-induced anomalous V_th change, which was concluded to be attributable to flat-band voltage (V_fb) change. In this work, we clarified the cause of mechanical stress-induced V_fb change in 4H-SiC (0001) n-type MOS structure and discussed possible origins of observed impact on V_fb.