Presentation Information
[23p-P03-5]Changes in Electronic Conductivity of AlN by Addition of Multiple Elements
〇Sri Ayu Anggraini1, Kenji Hirata1, Shinya Ohmagari1, Masato Uehara1, Hiroshi Yamada1, Morito Akiyama1 (1.AIST)
Keywords:
Nitride,sputtering,conductivity
Aluminum nitride (AlN) is a wurtzite structured nitride with direct bandgap of 6.12 eV, which rendered it an insulator [1]. Improvement in electronic conductivity is expected to expand the implementation of AlN in wider electronic applications. The conductivity of AlN can be tuned by doping, as observed when Mg was doped into AlN [1]. In this study, enhancement in electronic conductivity of AlN was observed when multiple elements were incorporated into AlN. Changes in crystal structure as well as valence state was also investigated here upon the addition of multiple elements into AlN.
References
[1] Taniyasu et al, Nature, 441 (2006) 325.
References
[1] Taniyasu et al, Nature, 441 (2006) 325.