Session Details

[23p-P03-1~6]13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 23, 2024 1:30 PM - 3:30 PM JST
Sat. Mar 23, 2024 4:30 AM - 6:30 AM UTC
P03 (Building No. 9)

[23p-P03-1]Spectral photosensitivity analysis of Mg2Si photodiodes formed under various
formation time of p-type diffusion layer.

〇Hibiki Katsumata1, Imaizumi Naoki1, Uematsu Tatsuya1, Sakane Shunya1, Udono Haruhiko1 (1.Ibaraki Univ.)

[23p-P03-2]Evaluation of Output Characteristics of Mg2Si TPV Cells with Stepped and Graded Uni-junctions

〇Takumi Shimizu1, Miyago Daisuke1, Sakane Shunya1, Udono Haruhiko1 (1.Ibaraki Univ.)

[23p-P03-3]Reaction of Ag thin film deposited on Mg2Si substrate after heat treatment

〇Hideto Takei1, Naoki Imaizumi1, Kaito Ojima1, Hiroto Kubota1, Syunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[23p-P03-4]The effect of substrate temperature on epitaxial growth of Mg3Sb2 thin film on c-Al2O3 substrates

〇Nozomu Kiridoshi1, Akito Ayukawa1, Shunya Sakane1, Takashi Komine1, Haruhiko Udono1 (1.Ibaraki Univ.)

[23p-P03-5]Changes in Electronic Conductivity of AlN by Addition of Multiple Elements

〇Sri Ayu Anggraini1, Kenji Hirata1, Shinya Ohmagari1, Masato Uehara1, Hiroshi Yamada1, Morito Akiyama1 (1.AIST)

[23p-P03-6]Fabrication of samarium oxide films by sputtering

Shin Kunieda1, 〇Tomoaki Yazaki1, Keisuke Arimoto1, Junji Yamanaka1, Kosuke O. Hara1 (1.CCST, Univ. of Yamanashi)