[24a-12E-1~9] 2.2 Radiation physics fundamentals & applications, radiation generators, new technology

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[24a-12E-8] The Effect of Capacitance on Damage Regions Caused by Radiation-Induced Burnout

〇Hikaru Nakamoto¹, Jun Furuta¹, Kazutoshi Kobayashi¹, Michitarou Yabuuchi², Shigetaka Kumashiro² (1.Kyoto Institute of Technology, 2.Renesas Electronics Corporation)

Keywords:

Single Event Burnout

With the widespread adoption of electric vehicles, the demand for power devices has increased, making radiation protection essential for improving reliability. This study focuses on Single Event Burnout (SEB), a type of permanent failure caused by radiation. Using a measurement circuit with different capacitor capacities (ranging from 15μF to 1nF), we evaluated the damage caused by SEB in Si IGBTs. Smaller capacitor capacities resulted in reduced damage, attributed to the decreased charge contributing to SEB. Future research will explore the feasibility of using alternative methods to suppress damage.