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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Highlighted Presentation

[24a-12J-4]Electron energy levels contributing to the 4f – 4f luminescence transition of praseodymium ions in nitride semiconductors

〇Shinichiro Sato¹, Kanako Shojiki^2,3, Hideto Miyake³ (1.QST, 2.Grad. Sch. of Eng. Kyoto Univ., 3.Grad. Sch. of Eng. Mie Univ.)

Keywords:

Nitride semiconductor,Praseodymium,Photoluminescence

The electron energy levels contributing to the luminescence transition of Pr³⁺ in nitride semiconductors (GaN and AlN) are investigated based on a comparison with the other host material (YAG). We found that the dominant luminescence peak around 1.9 eV in GaN:Pr is most likely due to the ¹D₂ - ³H₄ or ³P₀ - ³H₆ transition, rather than the ³P₀ - ³F₂ transition assigned by the previous studies.

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