[24a-1BB-1~10] KS.1 Solid State Quantum Sensor Group

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-1BB-9] Ionization path in photoelectrical spin detection of Si vacancy in SiC

〇Kazuki Okajima¹, Naoya Morioka^1,2, Tetsuri Nishikawa¹, Hiroshi Abe³, Takeshi Ohshima^3,4, Norikazu Mizuochi^1,2 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.Tohoku Univ.)

Keywords:

silicon carbide,silicon vacancy,PDMR

Electrical detection of color center's spins in semiconductors using photocurrent detected magnetic resonance(PDMR) is expected to contribute to realizing integrated quantum devices.However, the ionization path that leads to spin-dependent photocurrent generation in PDMR on silicon vacancy spin in 4H-SiC is still unrevealed. In this study, we measured and simulated the laser power dependent PDMR signal of silicon vacancies and evaluated the dominant ionization path in the PDMR process.