Session Details
[24a-1BB-1~10]KS.1 Solid State Quantum Sensor Group
Sun. Mar 24, 2024 9:00 AM - 12:00 PM JST
Sun. Mar 24, 2024 12:00 AM - 3:00 AM UTC
Sun. Mar 24, 2024 12:00 AM - 3:00 AM UTC
1BB (Building No. 1)
Takayuki Iwasaki(Tokyo Tech), Naoya Morioka(Kyoto University)
[24a-1BB-1][INVITED] Development of Quantum Spin Microscope for Physical Properties Measurements
〇Kensuke Kobayashi1 (1.Univ. of Tokyo)
[24a-1BB-2]Widefield Nitrogen-Vacancy Magnetometry of Pristine and Fe-implanted WS2
〇(D)Thitinun Gasosoth1, Yifei Wang1, Suvechhya Lamichhane2, Raman Kumar3, Tianlin Li2, Tom Delord3, Cory Cress4, Jose Fonesca Vega4, Xia Hong2, Toshu An1, Carlos Meriles3, Abdelghani Laraoui2 (1.JAIST, 2.U. Nebraska Lincoln, 3.CCNY, 4.U.S. Naval Res. Lab)
[24a-1BB-3]Imaging of up-to-MHz AC magnetization characteristics of soft magnetic thin film for power electronics by diamond quantum sensors
〇Ryota Kitagawa1, Aoi Nakatsuka1, Teruo Kohashi2, Takeyuki Tsuji1, Honami Nitta1, Kosuke Mizuno1, Yota Takamura1, Takayuki Iwasaki1, Shigeki Nakagawa1, Mutsuko Hatano1 (1.Tokyo Tech., 2.Hitachi, Ltd.)
[24a-1BB-4]Recovery of Spin Coherence Properties in Scanning Diamond NV Probes Fabricated by Ga+ Focused Ion Beam.
〇(PC)Dwi Prananto1, Yifei Wang1, Kunitaka Hayashi1, Toshu An1 (1.JAIST)
[24a-1BB-5]Optimization of spin properties of near-surface NV centers in 12C-enriched CVD diamond
〇Kasane Noda1, Kun Meng2, Dominik Bucher2, Toshu An1 (1.Japan Advanced Institute of Science and Technology, 2.TUM)
[24a-1BB-6]Numerical calcuration of the electlon spin dynamics of NV centers in diamonds driven by MW and strong RF fields
〇(M1)Shunta Onodera1, Yoshikatsu Ohkubo1, Mari Nakagawa1, Yusuke Azuma1, Hideyuki Watanabe2, Satoshi Kashiwaya3, Shintaro Nomura1 (1.Univ. of Tsukuba, 2.AIST, 3.Nagoya Univ.)
[24a-1BB-7]First-principles simulation on lase-induced dynamics of nitrogen doped diamond
〇Yoshiyuki Miyamoto1, Toshiharu Makino1, Hiromitsu Kato1 (1.AIST)
[24a-1BB-8]Observation of Single NV Centers by Scanning Photocurrent Microscopy
〇(D)Shunki Nakamura1,2, Naoya Morioka3,4, Norikazu Mizuochi3,4, Shigemi Mizukami2,5, Hiroki Morishita5,2 (1.Tohoku Univ., 2.Tohoku Univ. AIMR, 3.Kyoto Univ. ICR, 4.Kyoto Univ. CSRN, 5.Tohoku Univ. CSIS)
[24a-1BB-9]Ionization path in photoelectrical spin detection of Si vacancy in SiC
〇Kazuki Okajima1, Naoya Morioka1,2, Tetsuri Nishikawa1, Hiroshi Abe3, Takeshi Ohshima3,4, Norikazu Mizuochi1,2 (1.Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.Tohoku Univ.)
[24a-1BB-10]Dependence of SiC-silicon vacancy charge state stability on doping conditions
〇Yuichi Yamazaki1, Ryosuke Akashi1, Masafumi Hanawa2, Koichi Murata2, Shin-ichiro Sato1, Masanobu Miyawaki1, Shiro Entani1, Yuta Masuyama1, Yuichiro Matsushita1,3, Hidekazu Tsuchida2, Kohda Makoto1,4, Ohshima Takeshi1,4 (1.QST, 2.CRIEPI, 3.Tokyo Tech., 4.Tohoku Univ.)