Presentation Information
[24a-21C-3]High-temperature growth of AlN by TMA pulse supply
〇Yusuke Takayanagi1, Atsushi Tomita1, Koki Fujii1, Yuto Matsubara1, Yuusuke Takashima1,2, Yoshiki Naoi1,2, Kentaro Nagamatsu1,2 (1.Tokushima Univ., 2.pLED, Tokushima Univ.)
Keywords:
semiconductor,III-V nitrides,MOVPE