[24a-22A-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[24a-22A-4] Molecular beam epitaxial growth of GaAs/GaNAs core-multishell multiple quantum well nanowires with varying stacking period

〇Ryoga Iida^1,3, Kaito Nakama^2,3, Hidetosi Hashimoto^2,3, Keisuke Minehisa^2,3, Fumitaro Ishikawa³ (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)

Keywords:

molecular beam epitaxy,semiconductor nanowire,dilute nitrides