Presentation Information
[24a-22A-4]Molecular beam epitaxial growth of GaAs/GaNAs core-multishell multiple quantum well nanowires with varying stacking period
〇Ryoga Iida1,3, Kaito Nakama2,3, Hidetosi Hashimoto2,3, Keisuke Minehisa2,3, Fumitaro Ishikawa3 (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)
Keywords:
molecular beam epitaxy,semiconductor nanowire,dilute nitrides