The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[24a-22A-1~7]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Mar 24, 2024 9:30 AM - 11:30 AM JST
Sun. Mar 24, 2024 12:30 AM - 2:30 AM UTC
22A (Building No. 2)
Yukihiro Harada(Kobe Univ.), Jiro Nishinaga(AIST)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-22A-1]Selective lateral MOVPE growth of InP on SOI (001) substrates for III-V/Si integration

〇Hiroya Homma1, Hiroki Sugiyama1, Tatsurou Hiraki1, Toru Segawa1, Shinji Matsuo1 (1.NTT)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24a-22A-2]Compound semiconductor nanowires showing light absorption and emission properties on Si in the near-infrared regime

〇Keisuke Minehisa1,2, Hidetoshi Hashimoto1,2, Kaito Nakama1,2, Fumitaro Ishikawa1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[24a-22A-3]Nucleation stages of GaAs nanowires on Si(111) substrates by MBE

〇Kaito Nakama1,2, Keisuke Minehisa1,2, Hidetoshi Hashimoto1,2, Fumitaro Ishikawa1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[24a-22A-4]Molecular beam epitaxial growth of GaAs/GaNAs core-multishell multiple quantum well nanowires with varying stacking period

〇Ryoga Iida1,3, Kaito Nakama2,3, Hidetosi Hashimoto2,3, Keisuke Minehisa2,3, Fumitaro Ishikawa3 (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[24a-22A-5]Molecular beam epitaxial growth of GaAs/GaInNAsSb core-multishell nanowires

〇Takuto Goto1,3, Kaito Nakama2,3, Hidetoshi Hashimoto2,3, Keisuke Minehisa2,3, Fumitaro Ishikawa3 (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[24a-22A-6]Effect of annealing temperature on optical characteristics of GaAs-based Nanowires

〇Hidetoshi Hashimoto1,3, Ryoga Iida2,3, Takuto Goto2,3, Keisuke Minehisa1,3, Kaito Nakama1,3, Fumitaro Ishikawa3 (1.Hokkaido Univ. Info., 2.Hokkaido Univ., 3.Hokkaido Univ. RCIQE)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[24a-22A-7]Fine tuning InAs quantum dot growth parameters for high areal coverage and density

〇(P)Hanif Mohammadi1, Ronel Roca1, Itaru Kamiya1 (1.Toyota tech. inst.)
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