Presentation Information
[24a-22B-5]Improvement of channel layer formation efficiency by SiO2 surface treatment before pentacene deposition
〇Naoki Goto1, Yutaro Irie1, Hajime Saito1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo univ. of Agri & Tech)
Keywords:
organic semiconductor
The objective of this study is to achieve deeper hole penetration near the interface in pentacene-based organic MOS.
The repair of defects at the organic semiconductor/insulator interface is important to improve the characteristics of organic MOS and OTFT. One of the possible causes of the interface defects is the trapping of OH groups on the SiO2 surface. In this study, we aim to remove OH groups at the pentacene/SiO2 interface by plasma nitridation on the SiO2 surface to repair the defects.
The repair of defects at the organic semiconductor/insulator interface is important to improve the characteristics of organic MOS and OTFT. One of the possible causes of the interface defects is the trapping of OH groups on the SiO2 surface. In this study, we aim to remove OH groups at the pentacene/SiO2 interface by plasma nitridation on the SiO2 surface to repair the defects.