Presentation Information

[24a-22B-6]Origin of Operational Instability in Polymer-Based Organic Field-Effect Transistors under Vacuum Environment

〇Kenji Sakamoto1, Kirill Bulgarevich1,2,3, Takeshi Yasuda1, Takeo Minari1, Masayuki Takeuchi1,2 (1.NIMS, 2.Univ. Tsukuba, 3.RIKEN)

Keywords:

Organic field-effect transistors,Bias stress effects,Polymeric organic semiconductors

Simultaneous achievement of high charge carrier mobility and high operational stability of polymer-based organic field-effect transistors (OFETs) is important for their practical application. To investigate the origin of intrinsic operational instability in polymer-based OFETs, the bias stress effects in OFETs with active layers of PBTTT and PCDTPT have been measured under vacuum environment. In the presentation, we will talk about the origin of intrinsic operational instability made clear by discussing the difference in the operational stability between the two OFETs.