Presentation Information

[24a-32A-8]Evaluation of graphene photodetectors using asymmetric metal electrodes

〇Rei Shuto1, Isao Morohashi2, Ya Zhang1 (1.Inst. of Eng., Tokyo Univ. of Agri.&Techno, 2.NICT)

Keywords:

graphene,sensor,photodetector

In this paper, two types of graphene photodetectors with Al-G-Au and Cr-G-Au structures were fabricated on Si/SiO2 substrates and characterized. photocurrent measurements of the Al-G-Au devices showed a photocurrent proportional to the incident power (~12.9 µA/W) under zero bias voltage conditions. Cr-G-Au devices before and after HF etching, photocurrent generation increased from 11.1 µA/W to 33.8 µA/W after etching. This result is useful for the realization of graphene photodetectors.