[24a-61A-1~7] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[24a-61A-3] Fabrication of amorphous ITZO TFT by Mist-CVD

〇Yuuki Shiomi¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

Oxide Semiconductor,Mist-CVD,In-Sn-Zn-O

To fabricate a TFT device by forming In-Sn-Zn-O films using the Mist CVD method. By changing the mist intermittency ratio and substrate temperature during film deposition , we examined the depositions conditions to get amorphous ITZO and band gap of around 3.2 eV. TFT is fabricated using the conditions. 1.06 cm2/Vs, and 750 mV/dec. were obtained.