[24a-71A-1~9] 3.8 Terahertz technologies (formerly 3.9)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[24a-71A-1] Measurement of free carrier transport near Si surface by terahertz time-domain spectroscopy

〇(D)Minxia Gan¹, Hiroaki Hanafusa¹, Yutaka Kadoya¹ (1.Hiroshima Univ.)

Keywords:

Terahertz time domain spectroscopy,Semiconductor surface,Carrier transport

Although free carrier transport is important for semiconductor device performance, measurements of thin carrier layers on device surfaces have rarely been reported. In particular, terahertz time-domain spectroscopy (THz-TDS) is limited to thicknesses of down to 500 nm. Ellipsometry (TDSE) is suitable for the measurement of near-surface carriers because of its reflective nature and high accuracy. In this study, a thin (200 nm) carrier layer was measured by reflection THz-TDSE using n-Si.