[24a-71A-1~9] 3.8 Terahertz technologies (formerly 3.9)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[24a-71A-7] Silicon wafer resistivity evaluation by using THz-PMT and injection-seeded THz-wave parametric generator

〇Naoya Kawai¹, Hisanari Takahashi¹, Ginji Sugiura¹, Kota Katsuyama¹, Yuma Takida², Tobias Olaf Buchmann³, Matej Sebek³, Simon Jappe Lange³, Peter Uhd Jepsen³, Hiroaki Minamide², Hiroshi Satozono¹, Takayuki Omura¹ (1.HPK, 2.RIKEN, 3.DTU)

Keywords:

Terahertz,semiconductor,is-TPG

The resistivity of silicon wafers was evaluated non-contact by spectral reflection measurements using THz-PMT and is-TPG light sources. THz-PMT is a detector that exhibits highly nonlinear response characteristics, so it can evaluate slight changes in the electric field strength of terahertz waves. The reflectance of silicon wafers was measured using THz-PMT and a pyrodetector, and the THz-PMT was able to detect minute differences in resistivity that could not be detected with a pyrodetector.