Presentation Information

[24a-71B-3]Evaluation of spin-orbit interactions in a gated InSb/AlInSb quantum well

〇Taizo Kawano1, Tadashi Fukuchi1, Tetsuya D. Mishima2, Michael B. Santos2, Jun Ishihara1, Sota Yamamoto1, Katsushi Hashimoto3,4, Yoshiro Hirayama4,5, Junsaku Nitta1,6, Makoto Kohda1,4,5,7 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Homer L. Dodge Dept. of Phys. and Astro. Univ. of Oklahoma, 3.Grad. Sch. of Sci., Tohoku Univ., 4.CSIS, Tohoku Univ., 5.QUARC, QST, 6.NTT Basic Research Laboratories, NTT Corporation, 7.DEFS, Tohoku Univ.)


Spin-orbit interactions,Two-dimensional electron gas,Weak antilocalization

The study focuses on InSb, a narrow-gap III-V semiconductor with significant applications in spintronics due to its strong spin-orbit interactions. InSb/superconductor hybrid structures are explored for potential use in topological quantum computing. Controversy surrounds the strength of Dresselhaus spin-orbit coefficients in InSb, with theoretical and experimental results showing discrepancies. In this study, we evaluated Dresselhaus spin-orbit coefficients in a gated InSb/AlInSb quantum well using quantum interference effects. The quantum well structure was grown on a (001)-oriented GaAs substrate, and carrier density modulation was confirmed through Shubnikov-de Haas measurements. Quantum interference effects were observed at 1.5 K, revealing weak anti-localization around zero magnetic field regions. The study aims to evaluate Dresselhaus spin-orbit coefficients in InSb.