Presentation Information
[24a-P07-5]Theoretical Analysis of InGaN Vacuum Traveling Carrier Photodiodes for Terahertz Wave Generation
Digu Huang1, Luyuan Wang1, Xun Wu1, Wenbiao Li1, Kiyoto Takahata1, Kazutoshi Kato2, 〇Takaaki Kakitsuka1 (1.Waseda Univ., 2.Kyushu Univ.)
Keywords:
photodiode,photoelectric conversion device,terahertz wave
An InGaN-vacuum traveling carrier photodiode for terahertz wave emission is theoretically demonstrated. A photoelectric conversion device consisting of a p-InGaN absorption layer and vacuum collection layer is designed based on the carrier transport model. The frequency response and output power at the terahertz frequencies are evaluated. The low-capacitance vacuum collection layer enables large area devices with high-frequency operation. Milliwatt-order THz wave generation at 300 GHz by photomixing has been theoretically demonstrated.